SI7113D

SI7113DN-T1-E3 vs SI7113DN-T1-E3-CUT TAPE vs SI7113DN

 
PartNumberSI7113DN-T1-E3SI7113DN-T1-E3-CUT TAPESI7113DN
DescriptionMOSFET -100V Vds 20V Vgs PowerPAK 1212-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-1212-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current13.2 A--
Rds On Drain Source Resistance134 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge35 nC--
Minimum Operating Temperature- 50 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation52 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.04 mm--
Length3.3 mm--
SeriesSI7--
Transistor Type1 P-Channel--
Width3.3 mm--
BrandVishay / Siliconix--
Forward Transconductance Min25 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time42 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesSI7113DN-E3--
Produttore Parte # Descrizione RFQ
Vishay / Siliconix
Vishay / Siliconix
SI7113DN-T1-E3 MOSFET -100V Vds 20V Vgs PowerPAK 1212-8
SI7113DN-T1-GE3 MOSFET -100V Vds 20V Vgs PowerPAK 1212-8
SI7113DN-T1-E3-CUT TAPE Nuovo e originale
SI7113DN-T1-GE3-CUT TAPE Nuovo e originale
SI7113DN Nuovo e originale
SI7113DN-TI-E3 Nuovo e originale
SI7113DN-TI-GE3 Nuovo e originale
Vishay
Vishay
SI7113DN-T1-GE3 MOSFET P-CH 100V 13.2A 1212-8
SI7113DN-T1-E3 Trans MOSFET P-CH 100V 3.5A 8-Pin PowerPAK 1212 T/R
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