 | | | |
| PartNumber | SI4190 | SI4190ADY | SI4190ADY-T1-E3 |
| Description | |||
| Manufacturer | Vishay Siliconix | - | - |
| Product Category | IC Chips | - | - |
| Series | TrenchFETR | - | - |
| Packaging | Digi-ReelR Alternate Packaging | - | - |
| Part Aliases | SI4190ADY-GE3 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | ThunderFET TrenchFET | - | - |
| Package Case | 8-SOIC (0.154", 3.90mm Width) | - | - |
| Technology | Si | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Number of Channels | 1 Channel | - | - |
| Supplier Device Package | 8-SO | - | - |
| Configuration | Single | - | - |
| FET Type | MOSFET N-Channel, Metal Oxide | - | - |
| Power Max | 6W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Drain to Source Voltage Vdss | 100V | - | - |
| Input Capacitance Ciss Vds | 1970pF @ 50V | - | - |
| FET Feature | Standard | - | - |
| Current Continuous Drain Id 25°C | 18.4A (Tc) | - | - |
| Rds On Max Id Vgs | 8.8 mOhm @ 15A, 10V | - | - |
| Vgs th Max Id | 2.8V @ 250μA | - | - |
| Gate Charge Qg Vgs | 67nC @ 10V | - | - |
| Pd Power Dissipation | 6 W | - | - |
| Vgs Gate Source Voltage | 2.8 V | - | - |
| Id Continuous Drain Current | 18.4 A | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Vgs th Gate Source Threshold Voltage | 2.8 V | - | - |
| Rds On Drain Source Resistance | 8.8 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Qg Gate Charge | 20.7 nC | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4190ADY-T1-GE3 | MOSFET 100V Vds 20V Vgs SO-8 | |
| SI4190 | Nuovo e originale | ||
| SI4190ADY | Nuovo e originale | ||
| SI4190ADY-T1-E3 | Nuovo e originale | ||
| SI4190DY-T1-E3 | Nuovo e originale | ||
Vishay |
SI4190ADY-T1-GE3 | MOSFET N-CH 100V 18.4A 8SO | |
| SI4190DY-T1-GE3 | MOSFET N-CH 100V 20A 8-SOIC |