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| PartNumber | SI2304BDS-T1-GE3 | SI2304-TP | SI2304BDS-T1-E3 |
| Description | MOSFET 30V 3.2A 1.08W 70mohm @ 10V | MOSFET N-Channel MOSFET, SOT-23 package | MOSFET 30V 3.2A 0.07Ohm |
| Manufacturer | Vishay | Micro Commercial Components (MCC) | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 2.6 A | 2.5 A | 2.6 A |
| Rds On Drain Source Resistance | 70 mOhms | 65 mOhms | 70 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1 V | 1.5 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 10 V |
| Qg Gate Charge | 2.6 nC | 10 nC | 2.6 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 0.75 W | 250 mW | 0.75 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET | - | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.45 mm | - | 1.45 mm |
| Length | 2.9 mm | - | 2.9 mm |
| Series | SI2 | N-Ch Polarity | SI2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 1.6 mm | - | 1.6 mm |
| Brand | Vishay / Siliconix | Micro Commercial Components (MCC) | Vishay / Siliconix |
| Forward Transconductance Min | 6 S | 4.6 S | 6 S |
| Fall Time | 15 ns | 8 ns | 15 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12.5 ns | 12 ns | 12.5 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 17 ns | 19 ns |
| Typical Turn On Delay Time | 7.5 ns | 8 ns | 7.5 ns |
| Part # Aliases | SI2304BDS-GE3 | - | SI2304BDS-E3 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2304BDS-T1-GE3 | MOSFET 30V 3.2A 1.08W 70mohm @ 10V | |
| SI2304DDS-T1-GE3 | MOSFET 30V Vds 20V Vgs SOT-23 | ||
| SI2304BDS-T1-E3 | MOSFET 30V 3.2A 0.07Ohm | ||
Micro Commercial Components (MCC) |
SI2304-TP | MOSFET N-Channel MOSFET, SOT-23 package | |
| SI2304 | Nuovo e originale | ||
| SI2304-TP | Trans MOSFET N-CH 30V 2.5A 3-Pin SOT-23 T/R | ||
| SI2304BDS | Nuovo e originale | ||
| SI2304BDS-TI-E3 | Nuovo e originale | ||
| SI2304CDS-T1-E3 | Nuovo e originale | ||
| SI2304DDS | Nuovo e originale | ||
| SI2304DDS-T1-E3 | Nuovo e originale | ||
| SI2304DDS-T1-GE3-S | Nuovo e originale | ||
| SI2304DDS-TI-GE3 | Nuovo e originale | ||
| SI2304DS | MOSFET, N CH, 30V, 1.7A, SOT23 | ||
| SI2304DS,125 | Nuovo e originale | ||
| SI2304DS-T1 | MOSFET 30V 2.5A 1.25 | ||
| SI2304DS-T1-E3 | Nuovo e originale | ||
| SI2304DS-T1-GE3 | Nuovo e originale | ||
| SI2304DS-T1. | Nuovo e originale | ||
| SI2304DS-T1/A4RZB | Nuovo e originale | ||
| SI2304DS-TI-E3 | Nuovo e originale | ||
| SI2304DS/DG+215 | Nuovo e originale | ||
| SI2304DS215 | Now Nexperia SI2304DS - Small Signal Field-Effect Transistor, 1.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
| SI2304BDS-T1-E3-CUT TAPE | Nuovo e originale | ||
| SI2304BDS-T1-GE3-CUT TAPE | Nuovo e originale | ||
| SI2304DDS-T1-GE3-CUT TAPE | Nuovo e originale | ||
Vishay |
SI2304BDS-T1-E3 | MOSFET N-CH 30V 2.6A SOT23-3 | |
| SI2304BDS-T1-GE3 | MOSFET N-CH 30V 2.6A SOT23-3 | ||
| SI2304DDS-T1-GE3 | MOSFET N-CH 30V 3.3A SOT23 | ||
Nexperia |
SI2304DS,215 | MOSFET N-CH 30V 1.7A SOT23 |