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SBSS

SBSS84LT1G vs SBSS138LT1G vs SBSS84LT1

 
PartNumberSBSS84LT1GSBSS138LT1GSBSS84LT1
DescriptionMOSFET PFET SPCL TRNFET SOT23 SPECIAL TR
ManufacturerON Semiconductor-
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityP-Channel-P-Channel
Vds Drain Source Breakdown Voltage50 V--
Id Continuous Drain Current130 mA--
Rds On Drain Source Resistance10 Ohms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge2.2 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation225 mW--
ConfigurationSingle-Single
QualificationAEC-Q101--
PackagingReel-Reel
SeriesSBSS84LT1G-SBSS84LT1G
Transistor Type1 P-Channel-1 P-Channel
BrandON Semiconductor--
Forward Transconductance Min50 mS--
Fall Time1.7 ns-1.7 ns
Product TypeMOSFET--
Rise Time9.7 ns-9.7 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12 ns-12 ns
Typical Turn On Delay Time3.6 ns-3.6 ns
Unit Weight0.000282 oz-0.050717 oz
Package Case--SOT-23-3
Pd Power Dissipation--225 mW
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--130 mA
Vds Drain Source Breakdown Voltage--- 50 V
Rds On Drain Source Resistance--10 Ohms
Qg Gate Charge--2.2 nC
Forward Transconductance Min--50 mS
Produttore Parte # Descrizione RFQ
SBSS84LT1G MOSFET PFET SPCL TR
SBSS138LT1G NFET SOT23 SPECIAL TR
SBSS84LT1 Nuovo e originale
ON Semiconductor
ON Semiconductor 		SBSS84LT1G MOSFET P-CH 50V 0.13A SOT-23
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