RQ3E180

RQ3E180AJTB vs RQ3E180GNTB vs RQ3E180BNTB

 
PartNumberRQ3E180AJTBRQ3E180GNTBRQ3E180BNTB
DescriptionMOSFET Nch 30V 18A Middle Power MOSFETMOSFET 4.5V Drive Nch MOSFETMOSFET 4.5V Drive Nch MOSFET
ManufacturerROHM SemiconductorROHM SemiconductorROHM Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseHSMT-8HSMT-8HSMT-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current18 A18 A39 A
Rds On Drain Source Resistance3.5 mOhms4.3 mOhms2.8 mOhms
Vgs th Gate Source Threshold Voltage500 mV2.5 V1 V
Vgs Gate Source Voltage12 V20 V20 V
Qg Gate Charge39 nC22.4 nC72 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation30 W2 W20 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
PackagingReelReelReel
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandROHM SemiconductorROHM SemiconductorROHM Semiconductor
Fall Time160 ns10.2 ns79 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time22 ns6.9 ns63 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time150 ns56.8 ns138 ns
Typical Turn On Delay Time28 ns16.5 ns14 ns
Part # AliasesRQ3E180AJRQ3E180GNRQ3E180BN
Forward Transconductance Min-17 S-
Produttore Parte # Descrizione RFQ
RQ3E180AJTB MOSFET Nch 30V 18A Middle Power MOSFET
RQ3E180GNTB MOSFET 4.5V Drive Nch MOSFET
RQ3E180BNTB MOSFET 4.5V Drive Nch MOSFET
RQ3E180AJTB MOSFET N-CH 30V 18A HSMR8
RQ3E180BNTB MOSFET N-CHANNEL 30V 39A 8HSMT
RQ3E180GNTB MOSFET N-CH 30V 18A 8-HSMT
RQ3E180AJ Nuovo e originale
RQ3E180BNFU7TB Nuovo e originale
RQ3E180GN Nuovo e originale
RQ3E180GN , SIZA60 Nuovo e originale
RQ3E180GNTB,T5012,PE-654 Nuovo e originale
RQ3E180BN Nuovo e originale
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