 |  | | |
| PartNumber | RN2710JE(TE85L,F) | RN2710JE | RN2710 |
| Description | Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| Configuration | Dual | - | - |
| Transistor Polarity | PNP | - | - |
| Typical Input Resistor | 4.7 kOhms | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | ESV-5 | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Maximum Operating Frequency | 200 MHz | - | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - | - |
| Continuous Collector Current | - 100 mA | - | - |
| Peak DC Collector Current | - 100 mA | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Reel | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Brand | Toshiba | - | - |
| Channel Mode | Enhancement | - | - |
| Maximum DC Collector Current | - 100 mA | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Toshiba |
RN2710JE(TE85L,F) | Bipolar Transistors - Pre-Biased ESV PLN (LF) TRANSISTOR Pd=200mW F=1MHz | |
| RN2710JE | Nuovo e originale | ||
| RN2710JE(TE85LF)CT-ND | Nuovo e originale | ||
| RN2710JE(TE85LF)DKR-ND | Nuovo e originale | ||
| RN2710JE(TE85LF)TR-ND | Nuovo e originale | ||
| RN2710 | Nuovo e originale |