 |  | | |
| PartNumber | RN1963(TE85L,F) | RN1963(TE85LF)CT-ND | RN1963 |
| Description | Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd=200mW F=250MHz | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| Configuration | Dual | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 22 kOhms | - | - |
| Typical Resistor Ratio | 1 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | US-6 | - | - |
| DC Collector/Base Gain hfe Min | 70 | - | - |
| Maximum Operating Frequency | 250 MHz | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Reel | - | - |
| Emitter Base Voltage VEBO | 10 V | - | - |
| Brand | Toshiba | - | - |
| Channel Mode | Enhancement | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Toshiba |
RN1963(TE85L,F) | Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd=200mW F=250MHz | |
| RN1963FE(TE85L,F) | Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V | ||
| RN1963FS(TPL3) | Bipolar Transistors - Pre-Biased 50mA 20volts 6Pin 22K x 22Kohms | ||
| RN1963FE(TE85L,F) | Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V | ||
| RN1963FE | Nuovo e originale | ||
| RN1963(TE85LF)CT-ND | Nuovo e originale | ||
| RN1963(TE85LF)DKR-ND | Nuovo e originale | ||
| RN1963(TE85LF)TR-ND | Nuovo e originale | ||
| RN1963FE(TE85LF)CT-ND | Nuovo e originale | ||
| RN1963FE(TE85LF)DKR-ND | Nuovo e originale | ||
| RN1963FE(TE85LF)TR-ND | Nuovo e originale | ||
| RN1963 | Nuovo e originale | ||
| RN1963FS | Nuovo e originale |