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| PartNumber | RN1117MFV(TPL3) | RN1118(T5L,F,T) | RN1117MFV,L3F |
| Description | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 10Kohms x 4.7Kohms | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | Bipolar Transistors - Pre-Biased Bias Resistor NPN .1A 50V 10kohm |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | Y |
| Transistor Polarity | NPN | NPN | NPN |
| Typical Input Resistor | 10 kOhms | 47 kOhms | 10 kOhms |
| Typical Resistor Ratio | 2.13 | 4.7 | 2.13 |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| DC Collector/Base Gain hfe Min | 30 | 50 | 30 |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | 50 V |
| Continuous Collector Current | 100 mA | 100 mA | 100 mA |
| Pd Power Dissipation | 150 mW | 100 mW | 150 mW |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | RN1117MFV | RN1118 | RN1117MFV |
| Packaging | Reel | Reel | Reel |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 15 V | 25 V | 15 V |
| Height | 1.2 mm | - | - |
| Length | 1.2 mm | - | - |
| Operating Temperature Range | - 65 C to + 150 C | - | - |
| Type | NPN Epitaxial Silicon Transistor | - | - |
| Width | 0.5 mm | - | - |
| Brand | Toshiba | Toshiba | Toshiba |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 8000 | 3000 | 8000 |
| Subcategory | Transistors | Transistors | Transistors |
| Configuration | - | Single | Single |
| Package / Case | - | SOT-416-3 | SOT-723-3 |
| Maximum DC Collector Current | - | 100 mA | 100 mA |
| Unit Weight | - | 0.000212 oz | 0.000053 oz |
| Maximum Operating Frequency | - | - | 250 MHz |
| Peak DC Collector Current | - | - | 100 mA |
| Channel Mode | - | - | Enhancement |