RGS8

RGS80TSX2DHRC11 vs RGS80TS65HRC11 vs RGS80TS65DHRC11

 
PartNumberRGS80TSX2DHRC11RGS80TS65HRC11RGS80TS65DHRC11
DescriptionIGBT Transistors 1200V 40A FIELD STOP TRENCHIGBT Transistors 650V 40A FIELD STOP TRENCHTrans IGBT Chip N-CH 650V 73A 3-Pin TO-247N (Alt: RGS80TS65DHRC11)
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247N-3TO-247N-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1200 V650 V-
Collector Emitter Saturation Voltage1.7 V1.65 V-
Maximum Gate Emitter Voltage30 V30 V-
Pd Power Dissipation555 W272 W-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 175 C+ 175 C-
PackagingTubeTube-
BrandROHM SemiconductorROHM Semiconductor-
Gate Emitter Leakage Current500 nA200 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Continuous Collector Current at 25 C-73 A-
Produttore Parte # Descrizione RFQ
RGS80TSX2HRC11 IGBT Transistors 1200V 40A FIELD STOP TRENCH
RGS80TSX2DHRC11 IGBT Transistors 1200V 40A FIELD STOP TRENCH
RGS80TS65HRC11 IGBT Transistors 650V 40A FIELD STOP TRENCH
RGS80TS65DHRC11 Trans IGBT Chip N-CH 650V 73A 3-Pin TO-247N (Alt: RGS80TS65DHRC11)
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