PSMN6R1-3

PSMN6R1-30YLDX vs PSMN6R1-30YLD vs PSMN6R1-30YLD115

 
PartNumberPSMN6R1-30YLDXPSMN6R1-30YLDPSMN6R1-30YLD115
DescriptionMOSFET N-channel 30 V 6.1 mo FET- Bulk (Alt: PSMN6R1-30YLD115)
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseLFPAK56-5--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current66 A--
Rds On Drain Source Resistance6.5 mOhms--
Vgs th Gate Source Threshold Voltage1.68 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge13.6 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation47 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandNexperia--
Fall Time7.2 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time9.8 ns--
Typical Turn On Delay Time7.5 ns--
Unit Weight0.003150 oz--
Produttore Parte # Descrizione RFQ
Nexperia
Nexperia
PSMN6R1-30YLDX MOSFET N-channel 30 V 6.1 mo FET
PSMN6R1-30YLDX IGBT Transistors MOSFET N-channel 30 V 6.1 mo FET
PSMN6R1-30YLD Nuovo e originale
PSMN6R1-30YLD115 - Bulk (Alt: PSMN6R1-30YLD115)
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