PSMN5R0-1

PSMN5R0-100ES,127 vs PSMN5R0-100PS,127

 
PartNumberPSMN5R0-100ES,127PSMN5R0-100PS,127
DescriptionMOSFET N-Ch 100V 5 mOhmsMOSFET N-Ch 100V 5 mOhms
ManufacturerNexperiaNexperia
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseI2PAK-3TO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V
Id Continuous Drain Current110 A110 A
Rds On Drain Source Resistance5 mOhms5 mOhms
Vgs th Gate Source Threshold Voltage3 V3 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge170 nC170 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation338 W338 W
ConfigurationSingleSingle
PackagingTubeTube
Transistor Type1 N-Channel1 N-Channel
BrandNexperiaNexperia
Product TypeMOSFETMOSFET
Factory Pack Quantity5050
SubcategoryMOSFETsMOSFETs
Unit Weight0.084199 oz0.211644 oz
Produttore Parte # Descrizione RFQ
Nexperia
Nexperia
PSMN5R0-100ES,127 MOSFET N-Ch 100V 5 mOhms
PSMN5R0-100PS,127 MOSFET N-Ch 100V 5 mOhms
PSMN5R0-100PS,127 MOSFET N-CH 100V 120A TO220AB
PSMN5R0-100ES,127 MOSFET N-Ch 100V 5 mOhms
PSMN5R0-100ES Now Nexperia PSMN5R0-100ES - Power Field-Effect Transistor, 120A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
PSMN5R0-100ES127 Now Nexperia PSMN5R0-100ES - Power Field-Effect Transistor, 120A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
PSMN5R0-100PS Nuovo e originale
PSMN5R0-100PS127 Now Nexperia PSMN5R0-100PS - Power Field-Effect Transistor, 120A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PSMN5R0-100XS127 Now Nexperia PSMN5R0-100XS - Power Field-Effect Transistor, 67.5A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
NXP Semiconductors
NXP Semiconductors
PSMN5R0-100XS,127 RF Bipolar Transistors MOSFET N-ch 100V MOSFET
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