PSMN041

PSMN041-80YLX vs PSMN041-80YL vs PSMN041-80YL115

 
PartNumberPSMN041-80YLXPSMN041-80YLPSMN041-80YL115
DescriptionMOSFET 80 V 41 mOhm logiclevel MOSFETMOS Power Transistors LV ( 41V-100V) (Alt: PSMN041-80YL)Now Nexperia Power Field-Effect Transistor, 25A I(D), 80V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseLFPAK56-5--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current25 A--
Rds On Drain Source Resistance41 mOhms--
Vgs th Gate Source Threshold Voltage1.7 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge21.9 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation64 W--
ConfigurationTriple--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandNexperia--
Fall Time10.5 ns--
Product TypeMOSFET--
Rise Time11.2 ns--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16.1 ns--
Typical Turn On Delay Time8.6 ns--
Unit Weight0.002628 oz--
Produttore Parte # Descrizione RFQ
Nexperia
Nexperia
PSMN041-80YLX MOSFET 80 V 41 mOhm logiclevel MOSFET
PSMN041-80YLX MOSFET N-CH 80V 25A LFPAK
PSMN041-80YL MOS Power Transistors LV ( 41V-100V) (Alt: PSMN041-80YL)
PSMN041-80YL115 Now Nexperia Power Field-Effect Transistor, 25A I(D), 80V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
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