| PartNumber | PMCXB900UELZ | PMCXB900UEZ | PMCXB1000UEZ |
| Description | MOSFET PMCXB900UEL/DFN1010B-6/REEL 7 | MOSFET 20 V, complementary N/P-channel Trench | MOSFET PMCXB1000UE/DFN1010B-6/REEL 7 |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | DFN-1010B-6 | DFN-1010B-6 | DFN-1010B-6 |
| Packaging | Reel | Reel | Reel |
| Brand | Nexperia | Nexperia | Nexperia |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.000042 oz | 0.000042 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | N-Channel, P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 600 mA, 500 mA | - |
| Rds On Drain Source Resistance | - | 470 mOhms, 1.02 Ohms | - |
| Vgs th Gate Source Threshold Voltage | - | 450 mV, 950 mV | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Qg Gate Charge | - | 700 pC, 2.1 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 380 mW | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel, 1 P-Channel | - |
| Forward Transconductance Min | - | 1 S, 480 mS | - |
| Fall Time | - | 51 ns, 6 ns | - |
| Rise Time | - | 9.2 ns, 5 ns | - |
| Typical Turn Off Delay Time | - | 19 ns, 13.5 ns | - |
| Typical Turn On Delay Time | - | 5.6 ns, 2.3 ns | - |