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| PartNumber | PHT6NQ10T,135 | PHT6NQ10T | PHT6NQ10T.135 |
| Description | MOSFET TAPE13 PWR-MOS | MOSFET, N CH, 100V, 6.5A, SOT223 | Trans MOSFET N-CH 100V 3A 4-Pin(3+Tab) SOT-223 T/R (Alt: PHT6NQ10T,135) |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 3 A | - | - |
| Rds On Drain Source Resistance | 90 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 21 nC | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.7 mm | - | - |
| Length | 6.7 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.7 mm | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Part # Aliases | /T3 PHT6NQ10T | - | - |
| Unit Weight | 0.008818 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Nexperia |
PHT6NQ10T,135 | MOSFET TAPE13 PWR-MOS | |
| PHT6NQ10T,135 | MOSFET N-CH 100V 3A SOT223 | ||
| PHT6NQ10T | MOSFET, N CH, 100V, 6.5A, SOT223 | ||
| PHT6NQ10T.135 | Trans MOSFET N-CH 100V 3A 4-Pin(3+Tab) SOT-223 T/R (Alt: PHT6NQ10T,135) | ||
| PHT6NQ10T135 | Now Nexperia PHT6NQ10T - Power Field-Effect Transistor, 3A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |