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| PartNumber | P60B6EN-5071 | P60B6EL | P60B6EN |
| Description | MOSFET 60V, 60A EETMOS POWER MOSFET | ||
| Manufacturer | Taiwan Semiconductor | - | Shindengen |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | Details |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | SMD/SMT |
| Package / Case | ITO-220-3 | - | TO-252-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | - | 60 V |
| Id Continuous Drain Current | 7 A | - | 60 A |
| Configuration | Single | - | Single |
| Packaging | Tube | - | Reel |
| Series | TSM7ND60CI | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Taiwan Semiconductor | - | Shindengen |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Rds On Drain Source Resistance | - | - | 6.4 mOhms |
| Vgs Gate Source Voltage | - | - | 20 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Qg Gate Charge | - | - | 44 nC |
| Maximum Operating Temperature | - | - | + 150 C |
| Channel Mode | - | - | Enhancement |
| Fall Time | - | - | 4 ns |
| Forward Transconductance Min | - | - | 15 S |
| Pd Power Dissipation | - | - | 62.5 W |
| Rise Time | - | - | 22 ns |
| Typical Turn Off Delay Time | - | - | 18 ns |
| Typical Turn On Delay Time | - | - | 10 ns |
| Unit Weight | - | - | 0.139332 oz |
