 | | | |
| PartNumber | NVD5867NL | NVD5867NLT4G | NVD5867NLT4G-TB01 |
| Description | MOSFET N-CH 60V DPAK | MOSFET N-CH 60V 22A DPAK DPAK | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single | - |
| Series | NVD5867NL | NVD5867NL | - |
| Packaging | Reel | Reel | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package Case | TO-252-3 | TO-252-3 | - |
| Technology | Si | Si | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Configuration | Single | Single | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Pd Power Dissipation | 43 W | 43 W | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Fall Time | 2.4 ns | 2.4 ns | - |
| Rise Time | 12.6 ns | 12.6 ns | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 22 A | 22 A | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Rds On Drain Source Resistance | 39 mOhms | 39 mOhms | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Typical Turn Off Delay Time | 18.2 ns | 18.2 ns | - |
| Typical Turn On Delay Time | 12.6 ns | 12.6 ns | - |
| Qg Gate Charge | 15 nC | 15 nC | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
| NVD5867NL | Nuovo e originale | ||
ON Semiconductor |
NVD5867NLT4G | MOSFET N-CH 60V DPAK | |
| NVD5867NLT4G-TB01 | MOSFET N-CH 60V 22A DPAK DPAK |