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| PartNumber | NVD5117PLT4G-VF01 | NVD5117PLT4G | NVD5117PL |
| Description | MOSFET PFET DPAK 60V 61A 16MOHM | MOSFET 60V T1 PCH DPAK | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DPAK-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 61 A | 11 A | - |
| Rds On Drain Source Resistance | 16 mOhms | 22 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 4.5 V | - |
| Qg Gate Charge | 85 nC | 85 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 118 W | 118 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Forward Transconductance Min | 30 S | 30 S | - |
| Fall Time | 132 ns | 132 ns | 132 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 195 ns | 195 ns | 195 ns |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 50 ns | 50 ns | 50 ns |
| Typical Turn On Delay Time | 22 ns | 22 ns | 22 ns |
| Series | - | NVD5117PL | NVD5117PL |
| Transistor Type | - | 1 P-Channel | 1 P-Channel |
| Unit Weight | - | 0.139332 oz | 0.139332 oz |
| Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | DPAK-3 |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 4.1W |
| Drain to Source Voltage Vdss | - | - | 60V |
| Input Capacitance Ciss Vds | - | - | 4800pF @ 25V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 11A (Ta), 61A (Tc) |
| Rds On Max Id Vgs | - | - | 16 mOhm @ 29A, 10V |
| Vgs th Max Id | - | - | 2.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 85nC @ 10V |
| Pd Power Dissipation | - | - | 118 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | - 61 A |
| Vds Drain Source Breakdown Voltage | - | - | - 60 V |
| Rds On Drain Source Resistance | - | - | 16 mOhms |
| Qg Gate Charge | - | - | 85 nC |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
| NVD5117PLT4G-VF01 | MOSFET PFET DPAK 60V 61A 16MOHM | ||
| NVD5117PLT4G | MOSFET 60V T1 PCH DPAK | ||
| NVD5117PL | Nuovo e originale | ||
| NVD5117PLT4G | MOSFET P-CH 60V 61A DPAK | ||
ON Semiconductor |
NVD5117PLT4G-VF01 | MOSFET P-CH 60V 61A DPAK |