NTRV

NTRV4101PT1G vs NTRV4101P vs NTRV4101PT

 
PartNumberNTRV4101PT1GNTRV4101PNTRV4101PT
DescriptionMOSFET PFET 20V 3.2A 85MO
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current2.4 A--
Rds On Drain Source Resistance210 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage1.8 V--
Qg Gate Charge7.5 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1.25 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReelReelReel
SeriesNTR4101PNTR4101PNTR4101P
Transistor Type1 P-Channel1 P-Channel1 P-Channel
BrandON Semiconductor--
Forward Transconductance Min7.5 S--
Fall Time21 ns21 ns21 ns
Product TypeMOSFET--
Rise Time12.6 ns12.6 ns12.6 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30.2 ns30.2 ns30.2 ns
Typical Turn On Delay Time7.5 ns7.5 ns7.5 ns
Unit Weight0.000282 oz0.050717 oz0.050717 oz
Package Case-SOT-23-3SOT-23-3
Pd Power Dissipation-730 mW730 mW
Vgs Gate Source Voltage-8 V8 V
Id Continuous Drain Current-- 2.4 A- 2.4 A
Vds Drain Source Breakdown Voltage-- 20 V- 20 V
Rds On Drain Source Resistance-70 mOhms70 mOhms
Qg Gate Charge-7.5 nC7.5 nC
Produttore Parte # Descrizione RFQ
NTRV4101PT1G MOSFET PFET 20V 3.2A 85MO
NTRV4101P Nuovo e originale
NTRV4101PT Nuovo e originale
NTRV4101PT1G-CUT TAPE Nuovo e originale
ON Semiconductor
ON Semiconductor
NTRV4101PT1G MOSFET P-CH 20V 1.8A SOT-23-3
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