NTR4170N

NTR4170NT1G vs NTR4170NT3G

 
PartNumberNTR4170NT1GNTR4170NT3G
DescriptionMOSFET NFET SOT23 30V 4A TRMOSFET NFET SOT23 30V 4A
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V
Id Continuous Drain Current3.9 A4 A
Rds On Drain Source Resistance55 mOhms-
Vgs th Gate Source Threshold Voltage600 mV-
Vgs Gate Source Voltage10 V-
Qg Gate Charge4.76 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation1.25 W-
ConfigurationSingleSingle
Channel ModeEnhancement-
PackagingReelReel
Height0.94 mm-
Length2.9 mm-
ProductMOSFET Small Signal-
SeriesNTR4170N-
Transistor Type1 N-Channel1 N-Channel
TypePower MOSFET-
Width1.3 mm-
BrandON SemiconductorON Semiconductor
Forward Transconductance Min8 S-
Fall Time3.5 ns-
Product TypeMOSFETMOSFET
Rise Time9.9 ns-
Factory Pack Quantity300010000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time15.1 ns-
Typical Turn On Delay Time6.4 ns-
Unit Weight0.050717 oz0.000282 oz
Produttore Parte # Descrizione RFQ
ON Semiconductor
ON Semiconductor
NTR4170NT1G MOSFET NFET SOT23 30V 4A TR
NTR4170NT3G MOSFET NFET SOT23 30V 4A
NTR4170NT1G MOSFET N-CH 30V 3.2A SOT23
NTR4170NT3G MOSFET N-CH 30V 3.2A SGL SOT23-3
NTR4170N Nuovo e originale
NTR4170NT1G-CUT TAPE Nuovo e originale
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