NTP64

NTP6410ANG vs NTP6410AN vs NTP6411AN

 
PartNumberNTP6410ANGNTP6410ANNTP6411AN
DescriptionMOSFET NFET TO220 100V 76A 13MOH
ManufacturerON SemiconductorON SemiconductorON
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleFETs - Single
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current76 A--
Rds On Drain Source Resistance11 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge120 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation188 W--
ConfigurationSingleSingle-
PackagingTubeTube-
SeriesNTP6410ANNTP6410AN-
Transistor Type1 N-Channel1 N-Channel-
BrandON Semiconductor--
Forward Transconductance Min40 S--
Fall Time190 ns190 ns-
Product TypeMOSFET--
Rise Time170 ns170 ns-
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time120 ns120 ns-
Typical Turn On Delay Time17 ns17 ns-
Unit Weight0.211644 oz0.211644 oz-
Package Case-TO-220-3-
Pd Power Dissipation-188 W-
Vgs Gate Source Voltage-+/- 20 V-
Id Continuous Drain Current-76 A-
Vds Drain Source Breakdown Voltage-100 V-
Vgs th Gate Source Threshold Voltage-2 V to 4 V-
Rds On Drain Source Resistance-11 mOhms-
Qg Gate Charge-120 nC-
Forward Transconductance Min-40 S-
Produttore Parte # Descrizione RFQ
NTP6412ANG MOSFET NFET TO220 100V 72A
NTP6410ANG MOSFET NFET TO220 100V 76A 13MOH
NTP6410AN Nuovo e originale
NTP6411AN Nuovo e originale
NTP6412AN Nuovo e originale
NTP6413AN Nuovo e originale
NTP6448AN Nuovo e originale
ON Semiconductor
ON Semiconductor
NTP6411ANG MOSFET N-CH 100V 72A TO-220AB
NTP6448ANG MOSFET N-CH 100V 80A TO-220
NTP6410ANG Darlington Transistors MOSFET NFET TO220 100V 76A 13MOH
NTP6413ANG IGBT Transistors MOSFET NFET TO220 100V 42A 28MOH
Top