NTMFS5C43

NTMFS5C430NT1G vs NTMFS5C430NLT3G vs NTMFS5C430NL

 
PartNumberNTMFS5C430NT1GNTMFS5C430NLT3GNTMFS5C430NL
DescriptionMOSFET T6D3F 40V NFETMOSFET NFET SO8FL 40V 200A
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-FL-8SO-FL-8-
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current185 A--
Rds On Drain Source Resistance1.4 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge47 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation106 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReelReelReel
Transistor Type1 N-Channel--
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min130 S--
Fall Time8 ns-9 ns
Product TypeMOSFETMOSFET-
Rise Time48 ns-140 ns
Factory Pack Quantity15005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time29 ns-31 ns
Typical Turn On Delay Time13 ns-15 ns
Series-NTMFS5C430NL-
Package Case--DFN-5
Pd Power Dissipation--110 W
Vgs Gate Source Voltage--+/- 20 V
Id Continuous Drain Current--200 A
Vds Drain Source Breakdown Voltage--40 V
Vgs th Gate Source Threshold Voltage--1.2 V
Rds On Drain Source Resistance--2.2 mOhms
Qg Gate Charge--70 nC
Produttore Parte # Descrizione RFQ
NTMFS5C430NT1G MOSFET T6D3F 40V NFET
NTMFS5C430NLT3G MOSFET NFET SO8FL 40V 200A
NTMFS5C430NT3G MOSFET T6D3F 40V NFET
NTMFS5C430NL Nuovo e originale
ON Semiconductor
ON Semiconductor
NTMFS5C430NLT1G MOSFET NFET SO8FL 40V 200A
NTMFS5C430NLT1G MOSFET N-CH 40V 200A SO8FL
NTMFS5C430NT1G T6 40V MOSFET
NTMFS5C430NLT3G MOSFET N-CH 40V 200A SO8FL
NTMFS5C430NT3G MOSFET N-CH 40V 35A 185A 5DFN
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