NTLGD3

NTLGD3502NT1G vs NTLGD3402PT1G vs NTLGD3502N

 
PartNumberNTLGD3502NT1GNTLGD3402PT1GNTLGD3502N
DescriptionMOSFET NFET DFN 20V 4.6A 3X3mm 60M
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDFN-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.3 A--
Rds On Drain Source Resistance60 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.74 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height0.87 mm--
Length3 mm--
ProductMOSFET Small Signal--
Transistor Type2 N-Channel--
Width3 mm--
BrandON Semiconductor--
Fall Time17.5 ns--
Product TypeMOSFET--
Rise Time17.5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time8.6 ns--
Typical Turn On Delay Time7 ns--
Unit Weight0.000744 oz--
Produttore Parte # Descrizione RFQ
NTLGD3502NT2G MOSFET NFET DFN 20V 4.6A 3X3 60M
NTLGD3402PT1G Nuovo e originale
NTLGD3502N Nuovo e originale
ON Semiconductor
ON Semiconductor
NTLGD3502NT1G MOSFET NFET DFN 20V 4.6A 3X3mm 60M
NTLGD3502NT1G MOSFET 2N-CH 20V 4.3A/3.6A 6DFN
NTLGD3502NT2G RF Bipolar Transistors MOSFET NFET DFN 20V 4.6A 3X3 60M
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