 |  | | |
| PartNumber | NTK3139PT1G | NTK3139P | NTK3139PT1G , FM102-LF |
| Description | MOSFET 20V/6V P CH T1 780mA 0.4 | ||
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-723-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 780 mA | - | - |
| Rds On Drain Source Resistance | 380 mOhms | - | - |
| Vgs Gate Source Voltage | 6 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 310 mW | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 0.5 mm | - | - |
| Length | 1.2 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | NTK3139P | NTK3139P | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Type | MOSFET | - | - |
| Width | 0.8 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 1.2 S | - | - |
| Fall Time | 5.8 ns | 5.8 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.8 ns | 5.8 ns | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 32.7 ns | 32.7 ns | - |
| Typical Turn On Delay Time | 9 ns | 9 ns | - |
| Package Case | - | SOT-723 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-723 | - |
| FET Type | - | MOSFET P-Channel, Metal Oxide | - |
| Power Max | - | 310mW | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 170pF @ 16V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 660mA (Ta) | - |
| Rds On Max Id Vgs | - | 480 mOhm @ 780mA, 4.5V | - |
| Vgs th Max Id | - | 1.2V @ 250μA | - |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | 310 mW | - |
| Vgs Gate Source Voltage | - | 6 V | - |
| Id Continuous Drain Current | - | - 780 mA | - |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - |
| Rds On Drain Source Resistance | - | 380 mOhms | - |
| Forward Transconductance Min | - | 1.2 S | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
| NTK3139PT1G | MOSFET 20V/6V P CH T1 780mA 0.4 | ||
| NTK3139PT5G | MOSFET 20V/6V P CH T1 780mA 0.4 | ||
| NTK3139P | Nuovo e originale | ||
| NTK3139PT1G , FM102-LF | Nuovo e originale | ||
| NTK3139PT1H | Power Field-Effect Transisto | ||
| NTK3139PT1G-CUT TAPE | Nuovo e originale | ||
ON Semiconductor |
NTK3139PT1G | MOSFET P-CH 20V 0.66A SOT-723 | |
| NTK3139PT5G | MOSFET P-CH 20V 660MA SOT-723 |