NTD6414

NTD6414ANT4G vs NTD6414AN vs NTD6414ANLT4G

 
PartNumberNTD6414ANT4GNTD6414ANNTD6414ANLT4G
DescriptionMOSFET NFET DPAK 100V 34A 37MO
ManufacturerON SemiconductorON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current32 A--
Rds On Drain Source Resistance37 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge40 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation100 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelReel-
SeriesNTD6414ANNTD6414AN-
Transistor Type1 N-Channel1 N-Channel-
BrandON Semiconductor--
Forward Transconductance Min18 S--
Fall Time48 ns48 ns-
Product TypeMOSFET--
Rise Time52 ns52 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time38 ns38 ns-
Typical Turn On Delay Time11 ns11 ns-
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-100 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-32 A-
Vds Drain Source Breakdown Voltage-100 V-
Vgs th Gate Source Threshold Voltage-2 V-
Rds On Drain Source Resistance-30 mOhms-
Qg Gate Charge-40 nC-
Forward Transconductance Min-18 S-
Produttore Parte # Descrizione RFQ
NTD6414ANT4G MOSFET NFET DPAK 100V 34A 37MO
NTD6414AN Nuovo e originale
NTD6414ANLT4G Nuovo e originale
NTD6414ANT4G-CUT TAPE Nuovo e originale
ON Semiconductor
ON Semiconductor
NTD6414AN-1G MOSFET N-CH 100V 32A IPAK
NTD6414ANT4G MOSFET N-CH 100V 32A DPAK
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