NTD5862NT

NTD5862NT4G vs NTD5862NT4G , FL1100-1Q0 vs NTD5862NT4G-CUT TAPE

 
PartNumberNTD5862NT4GNTD5862NT4G , FL1100-1Q0NTD5862NT4G-CUT TAPE
DescriptionMOSFET NFET DPAK 60V 102A 6MOHM
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current98 A--
Rds On Drain Source Resistance5.7 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge82 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation115 W--
ConfigurationSingle--
PackagingReel--
Transistor Type1 N-Channel--
BrandON Semiconductor--
Fall Time60 ns--
Product TypeMOSFET--
Rise Time70 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time35 ns--
Typical Turn On Delay Time18 ns--
Unit Weight0.139332 oz--
Produttore Parte # Descrizione RFQ
NTD5862NT4G MOSFET NFET DPAK 60V 102A 6MOHM
NTD5862NT4G , FL1100-1Q0 Nuovo e originale
NTD5862NT4G-CUT TAPE Nuovo e originale
ON Semiconductor
ON Semiconductor
NTD5862NT4G MOSFET N-CH 60V 98A DPAK
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