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| PartNumber | NTD4860N-1G | NTD4860N-35G | NTD4860N |
| Description | MOSFET NFET 25V 65A 0.0075R DPAK | MOSFET NFET 25V 65A 0.0075R DPAK | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | TO-252-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
| Id Continuous Drain Current | 13 A | 13 A | - |
| Rds On Drain Source Resistance | 7.5 mOhms | 7.5 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 2 W | 2 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Height | 6.35 mm | 6.22 mm | - |
| Length | 6.73 mm | 6.73 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 2.38 mm | 2.38 mm | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Fall Time | 4.3 ns, 2.3 ns | 4.3 ns, 2.3 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 20.1 ns, 17 ns | 20.1 ns, 17 ns | - |
| Factory Pack Quantity | 75 | 75 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 15.2 ns, 22 ns | 15.2 ns, 22 ns | - |
| Typical Turn On Delay Time | 12.2 ns, 7.1 ns | 12.2 ns, 7.1 ns | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |