 |  | | |
| PartNumber | NTD4806NT4G | NTD4806NT4G 4806NG | NTD4806NT4GDPAK |
| Description | MOSFET N-CH 30V 11.3A DPAK | ||
| Manufacturer | ON | - | - |
| Product Category | FETs - Single | - | - |
| Series | NTD4806N | - | - |
| Packaging | Reel | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 2.14 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 7.8 ns 4.7 ns | - | - |
| Rise Time | 29.7 ns 23.8 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 14 A | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Rds On Drain Source Resistance | 6 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 18.3 ns 26 ns | - | - |
| Typical Turn On Delay Time | 13.9 ns 8.5 ns | - | - |
| Forward Transconductance Min | 14 S | - | - |
| Channel Mode | Enhancement | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
ON Semiconductor |
NTD4806NT4G | MOSFET N-CH 30V 11.3A DPAK | |
| NTD4806NT4G 4806NG | Nuovo e originale | ||
| NTD4806NT4GDPAK | Nuovo e originale |