NTD2955T4

NTD2955T4G vs NTD2955T4 vs NTD2955T4G , MMBT4258

 
PartNumberNTD2955T4GNTD2955T4NTD2955T4G , MMBT4258
DescriptionMOSFET -60V -12A P-ChannelMOSFET -60V -12A P-Channel
ManufacturerON SemiconductorONS-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-4--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance180 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge15 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation55 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.38 mm--
Length6.73 mm--
SeriesNTD2955NTD2955-
Transistor Type1 P-Channel1 P-Channel-
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor--
Forward Transconductance Min8 S--
Fall Time48 ns48 ns-
Product TypeMOSFET--
Rise Time45 ns45 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26 ns26 ns-
Typical Turn On Delay Time10 ns10 ns-
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-55 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-- 12 A-
Vds Drain Source Breakdown Voltage-- 60 V-
Rds On Drain Source Resistance-155 mOhms-
Forward Transconductance Min-8 S-
Produttore Parte # Descrizione RFQ
NTD2955T4G MOSFET -60V -12A P-Channel
NTD2955T4 MOSFET -60V -12A P-Channel
NTD2955T4G , MMBT4258 Nuovo e originale
NTD2955T4G-CUT TAPE Nuovo e originale
ON Semiconductor
ON Semiconductor
NTD2955T4G MOSFET P-CH 60V 12A DPAK
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