NTD110N02RT4

NTD110N02RT4G vs NTD110N02RT4

 
PartNumberNTD110N02RT4GNTD110N02RT4
DescriptionMOSFET 24V 110A N-ChannelMOSFET 24V 110A N-Channel
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSYN
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage24 V24 V
Id Continuous Drain Current110 A110 A
Rds On Drain Source Resistance4.1 mOhms4.1 mOhms
Vgs Gate Source Voltage20 V20 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation2.88 W2.88 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Height2.38 mm2.38 mm
Length6.73 mm6.73 mm
SeriesNTD110N02R-
Transistor Type1 N-Channel1 N-Channel
TypeMOSFETMOSFET
Width6.22 mm6.22 mm
BrandON SemiconductorON Semiconductor
Forward Transconductance Min44 S44 S
Fall Time21 ns21 ns
Product TypeMOSFETMOSFET
Rise Time39 ns39 ns
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time27 ns27 ns
Typical Turn On Delay Time11 ns11 ns
Unit Weight0.139332 oz0.139332 oz
Produttore Parte # Descrizione RFQ
ON Semiconductor
ON Semiconductor
NTD110N02RT4G MOSFET 24V 110A N-Channel
NTD110N02RT4 MOSFET 24V 110A N-Channel
NTD110N02RT4 MOSFET N-CH 24V 12.5A DPAK
NTD110N02RT4G MOSFET N-CH 24V 12.5A DPAK
NTD110N02RT4G-001 Nuovo e originale
NTD110N02RT4G-CUT TAPE Nuovo e originale
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