NSS125

NSS12500UW3T2G vs NSS12500UM3T2G vs NSS12500UW3T1G

 
PartNumberNSS12500UW3T2GNSS12500UM3T2GNSS12500UW3T1G
DescriptionBipolar Transistors - BJT 2 2 LOW VCE(SAT) TR
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseWDFN-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 12 V--
Collector Base Voltage VCBO- 12 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage- 200 mV--
Maximum DC Collector Current5 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesNSS12500UW3--
Height0.75 mm--
Length2 mm--
PackagingReel--
Width2 mm--
BrandON Semiconductor--
Continuous Collector Current- 5 A--
DC Collector/Base Gain hfe Min250--
Pd Power Dissipation875 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Produttore Parte # Descrizione RFQ
NSS12500UW3T2G Bipolar Transistors - BJT 2 2 LOW VCE(SAT) TR
NSS12501UW3T2G Bipolar Transistors - BJT LO V NPN TRANSISTOR 12V 7.0A
NSS12500UM3T2G Nuovo e originale
NSS12500UW3T1G Nuovo e originale
ON Semiconductor
ON Semiconductor
NSS12500UW3T2G Bipolar Transistors - BJT 2 2 LOW VCE(SAT) TR
NSS12501UW3T2G Bipolar Transistors - BJT LO V NPN TRANSISTOR 12V 7.0A
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