NE66

NE66219-A vs NE66219-T1-A vs NE662M04-A

 
PartNumberNE66219-ANE66219-T1-ANE662M04-A
DescriptionRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN High Frequency
ManufacturerCELCELCEL
Product CategoryRF Bipolar TransistorsTransistors - Bipolar (BJT) - RFTransistors - Bipolar (BJT) - RF
RoHSY--
Transistor TypeBipolarNPNNPN
TechnologySiSiSi
Transistor PolarityNPNNPNNPN
Emitter Base Voltage VEBO1.5 V--
Continuous Collector Current0.035 A0.035 A0.035 A
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
ConfigurationSingleSingleSingle
Collector Base Voltage VCBO15 V--
DC Current Gain hFE Max60 at 5 mA at 2 V--
Operating Frequency21000 MHz (Typ)21000 MHz (Typ)25 GHz
TypeRF Bipolar Small Signal--
BrandCEL--
Pd Power Dissipation115 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity1--
SubcategoryTransistors--
Series---
Packaging-Tape & Reel (TR) Alternate PackagingBulk Alternate Packaging
Part Aliases-2SC5606-T1-A-
Mounting Style-SMD/SMTSMD/SMT
Package Case-SOT-523SOT-343F
Mounting Type-Surface MountSurface Mount
Supplier Device Package-SOT-523SOT-343F
Power Max-115mW115mW
Current Collector Ic Max-35mA35mA
Voltage Collector Emitter Breakdown Max-3.3V3.3V
DC Current Gain hFE Min Ic Vce-60 @ 5mA, 2V50 @ 5mA, 2V
Frequency Transition-21GHz25GHz
Noise Figure dB Typ f-1.2dB @ 2GHz1.1dB @ 2GHz
Gain-14dB18dB
Pd Power Dissipation-115 mW0.115 W
Emitter Base Voltage VEBO-1.5 V1.5 V
Collector Emitter Voltage VCEO Max--3.3 V
DC Collector Base Gain hfe Min--70
Produttore Parte # Descrizione RFQ
CEL
CEL
NE662M04-EVNF19 RF Development Tools For NE662M04-A Noise Figure at 1.9 GHz
NE662M04-EVNF09 RF Development Tools For NE662M04-A Noise Figure at 900 MHz
NE663M04-A RF Bipolar Transistors NPN High Frequency
NE66219-A RF Bipolar Transistors NPN High Frequency
NE662M04-EVGA09 RF Development Tools For NE662M04-A Gain at 900 MHz
NE662M04-T2-A RF Bipolar Transistors NPN High Frequency
NE664M04-A RF Bipolar Transistors NPN High Frequency
NE662M04-EVGA19 RF Development Tools For NE662M04-A Gain at 1.9 GHz
NE663M04-T2-A RF Bipolar Transistors NPN High Frequency
NE664M04-EVPW24 Amplifier IC Development Tools For NE664M04-A Power at 2.4 GHz
NE664M04-T2-A Nuovo e originale
NE663M04-T2-A Nuovo e originale
NE66219-T1-A RF Bipolar Transistors NPN High Frequency
NE662M04-T2-A Nuovo e originale
NE66219-A RF Bipolar Transistors NPN High Frequency
NE664M04-A RF Bipolar Transistors NPN High Frequency
NE662M04-A RF Bipolar Transistors NPN High Frequency
NE662M04-EVGA09-A EVAL BOARD FOR NE662M04 900MHZ
NE6606 Nuovo e originale
NE660D Nuovo e originale
NE6610 Nuovo e originale
NE66108BS Nuovo e originale
NE6610BS Nuovo e originale
NE661M04 RF Bipolar Transistors
NE661M04-T1-A Nuovo e originale
NE661M04-T2 Nuovo e originale
NE661M05 Nuovo e originale
NE661M05-T1 Nuovo e originale
NE661M05-T1-A Nuovo e originale
NE661MD5 Nuovo e originale
NE66200 Nuovo e originale
NE66219 RF Bipolar Transistors NPN High Frequency
NE66219-T1-A/UA Nuovo e originale
NE662M03 Nuovo e originale
NE662M03-T1 Nuovo e originale
NE662M03-T1-A Nuovo e originale
NE662M03T1A Nuovo e originale
NE662M04 RF Bipolar Transistors NPN High Frequency
NE662M04-T1-A Nuovo e originale
NE662M04-T1/T79 Nuovo e originale
NE662M04-T2 Nuovo e originale
NE662M04-T2-A (T79)(2SC Nuovo e originale
NE662M04-T2-A/T79 Nuovo e originale
NE662M04-TI Nuovo e originale
NE662M16 RF Bipolar Transistors NPN High Frequency
NE662M4-T2 Nuovo e originale
NE663M04 RF Bipolar Transistors
NE663M04-T2-A/T80 Nuovo e originale
NE664M04 RF Bipolar Transistors NPN High Frequency
NE664M04-T1-A Nuovo e originale
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