MSD602-RT1G

MSD602-RT1G vs MSD602-RT1G , DAC904U vs MSD602-RT1G/WR

 
PartNumberMSD602-RT1GMSD602-RT1G , DAC904UMSD602-RT1G/WR
DescriptionBipolar Transistors - BJT SS GP XSTR NPN 25V
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-59-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO7 V--
Maximum DC Collector Current0.5 A--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMSD602-RT1--
Height1.09 mm--
Length2.9 mm--
PackagingReel--
Width1.5 mm--
BrandON Semiconductor--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation200 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Produttore Parte # Descrizione RFQ
MSD602-RT1G Bipolar Transistors - BJT SS GP XSTR NPN 25V
MSD602-RT1G , DAC904U Nuovo e originale
MSD602-RT1G/WR Nuovo e originale
ON Semiconductor
ON Semiconductor
MSD602-RT1G Bipolar Transistors - BJT SS GP XSTR NPN 25V
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