PartNumber | MRF10120 | MRF101AN | MRF101AN-230MHZ |
Description | RF Bipolar Transistors | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V | MRF100AN REFERENCE BRD - 233MHZ |
Manufacturer | MACOM | NXP | - |
Product Category | RF Bipolar Transistors | RF MOSFET Transistors | - |
Transistor Type | Bipolar Power | - | - |
Technology | Si | Si | - |
Transistor Polarity | NPN | N-Channel | - |
DC Collector/Base Gain hfe Min | 20 | - | - |
Collector Emitter Voltage VCEO Max | 55 V | - | - |
Emitter Base Voltage VEBO | 3.5 V | - | - |
Continuous Collector Current | 15 A | - | - |
Minimum Operating Temperature | - 65 C | - 40 C | - |
Maximum Operating Temperature | + 200 C | + 150 C | - |
Configuration | Single | - | - |
Package / Case | 355C-2 | TO-220-3 | - |
Operating Frequency | 1.215 GHz | 1.8 MHz to 250 MHz | - |
Type | RF Bipolar Power | RF Power MOSFET | - |
Brand | MACOM | NXP Semiconductors | - |
Pd Power Dissipation | 380 W | 182 W | - |
Product Type | RF Bipolar Transistors | RF MOSFET Transistors | - |
Factory Pack Quantity | 20 | 250 | - |
Subcategory | Transistors | MOSFETs | - |
Id Continuous Drain Current | - | 8.8 A | - |
Vds Drain Source Breakdown Voltage | - | 133 V | - |
Gain | - | 21.1 dB | - |
Output Power | - | 100 W | - |
Mounting Style | - | Through Hole | - |
Packaging | - | Tube | - |
Series | - | MRF101 | - |
Forward Transconductance Min | - | 7.1 S | - |
Number of Channels | - | 1 Channel | - |
Vgs Gate Source Voltage | - | - 6 V, + 10 V | - |
Vgs th Gate Source Threshold Voltage | - | 1.7 V | - |
Part # Aliases | - | 935377233129 | - |