MMBT6429

MMBT6429LT1G vs MMBT6429LT1 vs MMBT6429LT1G , BZX88-C11

 
PartNumberMMBT6429LT1GMMBT6429LT1MMBT6429LT1G , BZX88-C11
DescriptionBipolar Transistors - BJT 200mA 55V NPNBipolar Transistors - BJT 200mA 55V NPN
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max45 V45 V-
Collector Base Voltage VCBO55 V55 V-
Emitter Base Voltage VEBO6 V6 V-
Collector Emitter Saturation Voltage0.6 V0.6 V-
Maximum DC Collector Current0.2 A0.2 A-
Gain Bandwidth Product fT700 MHz700 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMBT6429L--
Height0.94 mm0.94 mm-
Length2.9 mm2.9 mm-
PackagingReelReel-
Width1.3 mm1.3 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current0.2 A0.2 A-
DC Collector/Base Gain hfe Min500500-
Pd Power Dissipation225 mW225 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000282 oz0.000282 oz-
Produttore Parte # Descrizione RFQ
MMBT6429LT1G Bipolar Transistors - BJT 200mA 55V NPN
MMBT6429LT1G , BZX88-C11 Nuovo e originale
MMBT6429LT1G-CUT TAPE Nuovo e originale
ON Semiconductor
ON Semiconductor
MMBT6429LT1 Bipolar Transistors - BJT 200mA 55V NPN
MMBT6429LT1 TRANS NPN 45V 0.2A SOT23
MMBT6429LT1G Bipolar Transistors - BJT 200mA 55V NPN
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