 | |  | |
| PartNumber | MMBT5550LT1G | MMBT5550LT1 | MMBT5550LT1G-CUT TAPE |
| Description | Bipolar Transistors - BJT SS HV XSTR NPN 160V | Bipolar Transistors - BJT 600mA 160V NPN | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | N | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 140 V | 140 V | - |
| Collector Base Voltage VCBO | 180 V | 180 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 0.15 V | 0.15 V | - |
| Maximum DC Collector Current | 600 mA | 600 mA | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | MMBT5550L | - | - |
| Height | 0.94 mm | 0.94 mm | - |
| Length | 2.9 mm | 2.9 mm | - |
| Packaging | Reel | Reel | - |
| Width | 1.3 mm | 1.3 mm | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | 600 mA | 600 mA | - |
| DC Collector/Base Gain hfe Min | 60 | 60 | - |
| Pd Power Dissipation | 225 mW | 225 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
| MMBT5550LT1G | Bipolar Transistors - BJT SS HV XSTR NPN 160V | ||
| MMBT5550LT1G/M1F | Nuovo e originale | ||
| MMBT5550LT1G-CUT TAPE | Nuovo e originale | ||
ON Semiconductor |
MMBT5550LT1 | Bipolar Transistors - BJT 600mA 160V NPN | |
| MMBT5550LT1 | TRANS NPN 140V 0.6A SOT23 | ||
| MMBT5550LT1G | Bipolar Transistors - BJT SS HV XSTR NPN 160V |