| PartNumber | MJD5731T4G | MJD5731T4 |
| Description | Bipolar Transistors - BJT 1A 350V 15W PNP | Bipolar Transistors - BJT 1A 350V 15W PNP |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | N |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Transistor Polarity | PNP | PNP |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 350 V | 350 V |
| Collector Base Voltage VCBO | 5 V | 5 V |
| Emitter Base Voltage VEBO | 5 V | 5 V |
| Collector Emitter Saturation Voltage | 1 V | 1 V |
| Maximum DC Collector Current | 1 A | 1 A |
| Gain Bandwidth Product fT | 10 MHz | 10 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | MJD5731 | - |
| Height | 2.38 mm | 2.38 mm |
| Length | 6.73 mm | 6.73 mm |
| Packaging | Reel | Reel |
| Width | 6.22 mm | 6.22 mm |
| Brand | ON Semiconductor | ON Semiconductor |
| Continuous Collector Current | 1 A | 1 A |
| DC Collector/Base Gain hfe Min | 30 | 30 |
| Pd Power Dissipation | 15 W | 15 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | Transistors | Transistors |