KST4126

KST4126MTF vs KST4126 vs KST4126MTF , MAX6421US22

 
PartNumberKST4126MTFKST4126KST4126MTF , MAX6421US22
DescriptionBipolar Transistors - BJT PNP Si Transistor Epitaxial
ManufacturerON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3TO-236-3, SC-59, SOT-23-3-
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 25 V--
Collector Base Voltage VCBO- 25 V--
Emitter Base Voltage VEBO- 4 V--
Maximum DC Collector Current0.2 A--
Gain Bandwidth Product fT250 MHz--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max360--
Height0.93 mm--
Length2.9 mm--
PackagingReelTape & Reel (TR)-
Width1.3 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 0.2 A--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation350 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Series---
Part Status-Obsolete-
Transistor Type-PNP-
Current Collector (Ic) (Max)-200mA-
Voltage Collector Emitter Breakdown (Max)-25V-
Vce Saturation (Max) @ Ib, Ic-400mV @ 5mA, 50mA-
Current Collector Cutoff (Max)-50nA (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce-120 @ 2mA, 1V-
Power Max-350mW-
Frequency Transition-250MHz-
Operating Temperature---
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-3-
Base Part Number-*-
Produttore Parte # Descrizione RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
KST4126MTF Bipolar Transistors - BJT PNP Si Transistor Epitaxial
KST4126 Nuovo e originale
ON Semiconductor
ON Semiconductor
KST4126MTF Nuovo e originale
KST4126MTF , MAX6421US22 Nuovo e originale
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