 |  | | |
| PartNumber | KSB1017YTU | KSB1017 | KSB1017-Y |
| Description | Bipolar Transistors - BJT PNP Epitaxial Sil | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | E | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220F-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 80 V | - | - |
| Collector Base Voltage VCBO | - 80 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 1 V | - | - |
| Maximum DC Collector Current | 4 A | - | - |
| Gain Bandwidth Product fT | 9 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | KSB1017 | - | - |
| DC Current Gain hFE Max | 240 | - | - |
| Height | 9.19 mm | - | - |
| Length | 10.16 mm | - | - |
| Packaging | Tube | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | - 4 A | - | - |
| DC Collector/Base Gain hfe Min | 40 | - | - |
| Pd Power Dissipation | 25 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.080072 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
KSB1017YTU | Bipolar Transistors - BJT PNP Epitaxial Sil | |
| KSB1017 | Nuovo e originale | ||
| KSB1017-Y | Nuovo e originale | ||
ON Semiconductor |
KSB1017YTU | Bipolar Transistors - BJT PNP Epitaxial Sil |