 |  | | |
| PartNumber | Jantxv2N5416 | JANTXV2N5416U4 | JANTXV2N5416S |
| Description | Bipolar Transistors - BJT Power BJT | MOSFET Power BJT | Trans GP BJT PNP 300V 1A 3-Pin TO-39 |
| Manufacturer | Microchip | Microchip | - |
| Product Category | Bipolar Transistors - BJT | MOSFET | - |
| RoHS | N | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-5-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 300 V | - | - |
| Collector Base Voltage VCBO | 350 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 2 V | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| DC Current Gain hFE Max | 120 at 50 mA, 10 V | - | - |
| Packaging | Bulk | Tray | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| DC Collector/Base Gain hfe Min | 30 at 50 mA, 10 V | - | - |
| Pd Power Dissipation | 750 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | MOSFET | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | Transistors | MOSFETs | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Microchip / Microsemi |
Jantxv2N5416 | Bipolar Transistors - BJT Power BJT | |
| JANTXV2N5416U4 | MOSFET Power BJT | ||
| JANTXV2N5416S | Trans GP BJT PNP 300V 1A 3-Pin TO-39 | ||
| JANTXV2N5416U4 | MOSFET Power BJT | ||
| Jantxv2N5416UA | Bipolar Transistors - BJT Power BJT | ||
| Jantxv2N5416 | Bipolar Transistors - BJT Power BJT |