IXTR2

IXTR200N10P vs IXTR210P10T vs IXTR20P50P

 
PartNumberIXTR200N10PIXTR210P10TIXTR20P50P
DescriptionMOSFET 133 Amps 100V 0.008 RdsMOSFET TrenchP Channel Power MOSFETsMOSFET -13 Amps -500V 0.490 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel--
Transistor PolarityN-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage100 V100 V500 V
Id Continuous Drain Current120 A195 A13 A
Rds On Drain Source Resistance8 mOhms8 mOhms490 mOhms
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge235 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePolar--
PackagingTubeTubeTube
Height21.34 mm--
Length16.13 mm--
SeriesIXTR200N10IXTR210P10IXTR20P50
Transistor Type1 N-Channel--
TypePolar HiPerFET Power MOSFET--
Width5.21 mm--
BrandIXYSIXYSIXYS
Forward Transconductance Min60 S--
Fall Time90 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time35 ns--
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time150 ns--
Typical Turn On Delay Time30 ns--
Unit Weight0.186952 oz0.056438 oz0.186952 oz
Produttore Parte # Descrizione RFQ
Littelfuse
Littelfuse
IXTR200N10P MOSFET 133 Amps 100V 0.008 Rds
IXTR210P10T MOSFET TrenchP Channel Power MOSFETs
IXTR20P50P MOSFET -13 Amps -500V 0.490 Rds
IXTR210P10T MOSFET TrenchP Channel Power MOSFETs
IXTR200N10P MOSFET 133 Amps 100V 0.008 Rds
IXTR20P50P MOSFET -13 Amps -500V 0.490 Rds
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