| PartNumber | IXTP130N15X4 | IXTP130N10T | IXTP130N065T2 |
| Description | MOSFET DISCMSFT NCH HIPERFET-QCLASS | MOSFET MOSFET Id130 BVdass100 | IGBT Transistors MOSFET 130 Amps 65V |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 150 V | 100 V | - |
| Id Continuous Drain Current | 130 A | 130 A | - |
| Rds On Drain Source Resistance | 8.5 mOhms | 8.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 87 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 175 C | - |
| Pd Power Dissipation | 400 W | 360 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HiPerFET | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS | - |
| Fall Time | 10 ns | 28 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 27 ns | 47 ns | - |
| Factory Pack Quantity | 50 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 100 ns | 44 ns | - |
| Typical Turn On Delay Time | 20 ns | 30 ns | - |
| Packaging | - | Tube | Tube |
| Height | - | 9.15 mm | - |
| Length | - | 10.66 mm | - |
| Series | - | IXTP130N10 | IXTP130N065 |
| Width | - | 4.82 mm | - |
| Forward Transconductance Min | - | 93 S | - |
| Unit Weight | - | 0.081130 oz | 0.081130 oz |
| Package Case | - | - | TO-220-3 |
| Id Continuous Drain Current | - | - | 130 A |
| Vds Drain Source Breakdown Voltage | - | - | 65 V |
| Rds On Drain Source Resistance | - | - | 6.6 mOhms |