IXGR3

IXGR32N60B vs IXGR32N170H1 vs IXGR32N170AH1

 
PartNumberIXGR32N60BIXGR32N170H1IXGR32N170AH1
DescriptionIGBT Transistors 17 Amps 1700V 5.2 RdsIGBT Transistors 17 Amps 1700V 5.2 Rds
Manufacturer-IXYSIXYS
Product Category-IGBTs - SingleIGBTs - Single
Series-IXGR32N170IXGR32N170
Packaging-BulkBulk
Unit Weight-0.186952 oz0.186952 oz
Mounting Style-SMD/SMTThrough Hole
Package Case-ISOPLUS247ISOPLUS247
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-ISOPLUS247ISOPLUS247
Configuration-SingleSingle
Power Max-200W200W
Reverse Recovery Time trr-230ns230ns
Current Collector Ic Max-38A26A
Voltage Collector Emitter Breakdown Max-1700V1700V
IGBT Type-NPTNPT
Current Collector Pulsed Icm-200A200A
Vce on Max Vge Ic-3.5V @ 15V, 21A5.2V @ 15V, 21A
Switching Energy-10.6mJ (off)1.5mJ (off)
Gate Charge-155nC155nC
Td on off 25°C-45ns/270ns46ns/260ns
Test Condition-1360V, 21A, 2.7 Ohm, 15V1360V, 21A, 2.7 Ohm, 15V
Maximum Operating Temperature-+ 150 C+ 150 C
Minimum Operating Temperature-- 55 C- 55 C
Collector Emitter Voltage VCEO Max-1.7 kV1.7 kV
Collector Emitter Saturation Voltage-3.5 V4.2 V
Continuous Collector Current at 25 C-38 A26 A
Maximum Gate Emitter Voltage-+/- 20 V+/- 20 V
Pd Power Dissipation--200 W
Gate Emitter Leakage Current--100 nA
Continuous Collector Current Ic Max--200 A
Produttore Parte # Descrizione RFQ
Littelfuse
Littelfuse
IXGR35N120BD1 IGBT Transistors 23 Amps 1200V 3.7 Rds
IXGR32N60B Nuovo e originale
IXGR32N60CD1 IGBT 600V 45A 140W ISOPLUS247
IXGR32N90B2D1 IGBT 900V 47A 160W ISOPLUS247
IXGR32NN60CD1 Nuovo e originale
IXGR35N120B IGBT 1200V 70A 200W ISOPLUS247
IXGR39N60BD1 IGBT 600V 66A 140W ISOPLUS247
IXGR32N60C IGBT 600V 45A 140W ISOPLUS247
IXGR35N120C IGBT 1200V 70A 200W ISOPLUS247
IXGR35N120D1 IGBT 1200V ISOPLUS247
IXGR39N60B IGBT 600V 66A 140W ISOPLUS247
IXGR32N170H1 IGBT Transistors 17 Amps 1700V 5.2 Rds
IXGR35N120BD1 IGBT Transistors 23 Amps 1200V 3.7 Rds
IXGR32N170AH1 IGBT Transistors 17 Amps 1700V 5.2 Rds
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