 |  |  | |
| PartNumber | IXGB200N60B3 | IXGB16N60R2 | IXGB75N60BD1 |
| Description | IGBT Transistors GenX3 600V IGBT | IGBT 600V 120A 360W PLUS264 | |
| Manufacturer | IXYS | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | PLUS 264-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.35 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 75 A | - | - |
| Pd Power Dissipation | 1.25 kW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | IXGB200N60 | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 600 A | - | - |
| Height | 26.42 mm | - | - |
| Length | 20.29 mm | - | - |
| Operating Temperature Range | - 55 C to + 150 C | - | - |
| Width | 5.21 mm | - | - |
| Brand | IXYS | - | - |
| Continuous Collector Current | 75 A | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | IGBTs | - | - |
| Tradename | GenX3 | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Littelfuse |
IXGB200N60B3 | IGBT Transistors GenX3 600V IGBT | |
| IXGB16N60R2 | Nuovo e originale | ||
| IXGB75N60BD1 | IGBT 600V 120A 360W PLUS264 | ||
| IXGB200N60B3 | IGBT Transistors GenX3 600V IGBT |