IXFX26

IXFX26N120P vs IXFX26N100P vs IXFX260N17T

 
PartNumberIXFX26N120PIXFX26N100PIXFX260N17T
DescriptionMOSFET 32 Amps 1200V 0.46 RdsMOSFET 26 Amps 1000VMOSFET N-CH 170V 260A PLUS247
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1.2 kV1 kV-
Id Continuous Drain Current26 A20 A-
Rds On Drain Source Resistance500 mOhms390 mOhms-
Vgs th Gate Source Threshold Voltage6.5 V--
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge255 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation960 W780 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height21.34 mm21.34 mm-
Length16.13 mm16.13 mm-
SeriesIXFX26N120IXFX26N100-
Transistor Type1 N-Channel1 N-Channel-
TypePolar HiPerFET Power MOSFET--
Width5.21 mm5.21 mm-
BrandIXYSIXYS-
Forward Transconductance Min13 S--
Fall Time58 ns50 ns-
Product TypeMOSFETMOSFET-
Rise Time55 ns45 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time76 ns72 ns-
Typical Turn On Delay Time56 ns45 ns-
Unit Weight0.056438 oz0.056438 oz-
Produttore Parte # Descrizione RFQ
Littelfuse
Littelfuse
IXFX26N120P MOSFET 32 Amps 1200V 0.46 Rds
IXFX26N100P MOSFET 26 Amps 1000V
IXFX26N90 MOSFET 26 Amps 900V 0.3 Rds
IXFX26N120P MOSFET N-CH 1200V 26A PLUS247
IXFX260N17T MOSFET N-CH 170V 260A PLUS247
IXFX26N90 MOSFET 26 Amps 900V 0.3 Rds
IXFX26N60Q MOSFET 28 Amps 600V 0.25 Rds
IXFX26N100P MOSFET 26 Amps 1000V
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