| PartNumber | IXFT50N50P3 | IXFT50N20 | IXFT50N30Q3 |
| Description | MOSFET N-Channel: Power MOSFET w/Fast Diode | MOSFET 50 Amps 200V | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-268-3 | TO-268-3 | TO-268-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 200 V | 300 V |
| Id Continuous Drain Current | 50 A | 50 A | 50 A |
| Rds On Drain Source Resistance | 125 mOhms | 45 mOhms | 80 mOhms |
| Configuration | Single | Single | Single |
| Tradename | HyperFET | - | HiPerFET |
| Packaging | Tube | Tube | Tube |
| Series | IXFT50N50 | IXFT50N20 | IXFT50N30 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | IXYS | IXYS | IXYS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.229281 oz | 0.158733 oz | 0.229281 oz |
| RoHS | - | Y | Y |
| Vgs Gate Source Voltage | - | 20 V | 30 V |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 300 W | 690 W |
| Channel Mode | - | Enhancement | - |
| Height | - | 5.1 mm | - |
| Length | - | 16.05 mm | - |
| Width | - | 14 mm | - |
| Fall Time | - | 16 ns | - |
| Rise Time | - | 15 ns | 250 ns |
| Typical Turn Off Delay Time | - | 72 ns | - |
| Typical Turn On Delay Time | - | 18 ns | - |
| Qg Gate Charge | - | - | 65 nC |