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| PartNumber | IXFN90N85X | IXFN90N30 | IXFN90N170SK |
| Description | MOSFET 850V/90A Ultra Junction X-Class | MOSFET 90 Amps 300V 0.033 Rds | MOSFET SICARBIDE-DISCRETE MOSFET (MIN |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Package / Case | SOT-227-4 | SOT-227-4 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 850 V | 300 V | - |
| Id Continuous Drain Current | 90 A | 90 A | - |
| Rds On Drain Source Resistance | 41 mOhms | 33 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 4 V | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Qg Gate Charge | 340 nC | 360 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.2 kW | 560 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HyperFET | 0 |
| Packaging | Tube | Tube | Tube |
| Series | X-Class | IXFN90N30 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 37 S | 40 S | - |
| Fall Time | 8 ns | 40 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 20 ns | 55 ns | - |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 126 ns | 100 ns | - |
| Typical Turn On Delay Time | 50 ns | 42 ns | - |
| Unit Weight | 1.058219 oz | 1.058219 oz | - |
| Height | - | 12.22 mm | - |
| Length | - | 38.23 mm | - |
| Type | - | HiPerFET Power MOSFET | - |
| Width | - | 25.42 mm | - |