 |  | | |
| PartNumber | IXFN27N120SK | IXFN27N80 | IXFN27N80Q |
| Description | MOSFET SICARBIDE-DISCRETE MOSFET (MIN | MOSFET 800V 27A | MOSFET 27 Amps 800V 0.32 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Tradename | HiPerFET | HyperFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Brand | IXYS | IXYS | IXYS |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 10 | 10 | 10 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Technology | - | Si | Si |
| Mounting Style | - | Chassis Mount | Chassis Mount |
| Package / Case | - | SOT-227-4 | SOT-227-4 |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 800 V | 800 V |
| Id Continuous Drain Current | - | 27 A | 27 A |
| Rds On Drain Source Resistance | - | 300 mOhms | 320 mOhms |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 520 W | 520 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 9.6 mm | 9.6 mm |
| Length | - | 38.23 mm | 38.2 mm |
| Series | - | IXFN27N80 | IXFN27N80 |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Width | - | 25.42 mm | 25.07 mm |
| Forward Transconductance Min | - | 28 S | - |
| Fall Time | - | 40 ns | 13 ns |
| Rise Time | - | 80 ns | 28 ns |
| Typical Turn Off Delay Time | - | 75 ns | 50 ns |
| Typical Turn On Delay Time | - | 30 ns | 20 ns |
| Unit Weight | - | 1.058219 oz | 1.058219 oz |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Littelfuse |
IXFN27N120SK | MOSFET SICARBIDE-DISCRETE MOSFET (MIN | |
| IXFN27N80 | MOSFET 800V 27A | ||
| IXFN27N80Q | MOSFET 27 Amps 800V 0.32 Rds | ||
| IXFN27N80 | MOSFET 800V 27A | ||
| IXFN27N80Q | MOSFET 27 Amps 800V 0.32 Rds |