| PartNumber | IXFK120N20P | IXFK120N20 | IXFK120N25 |
| Description | MOSFET 120 Amps 200V 0.022 Rds | MOSFET 200V 120A | MOSFET 120 Amps 250V 0.022 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-264-3 | TO-264-3 | TO-264-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | 250 V |
| Id Continuous Drain Current | 120 A | 120 A | 120 A |
| Rds On Drain Source Resistance | 22 mOhms | 17 mOhms | 22 mOhms |
| Vgs th Gate Source Threshold Voltage | 5 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 152 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Pd Power Dissipation | 714 W | 560 W | 560 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | HiPerFET | HyperFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Height | 26.16 mm | 26.16 mm | 26.16 mm |
| Length | 19.96 mm | 19.96 mm | 19.96 mm |
| Series | IXFK120N20 | IXFK120N20 | IXFK120N25 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | PolarHT HiPerFET Power MOSFET | - | - |
| Width | 5.13 mm | 5.13 mm | 5.13 mm |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 40 S | 77 S | - |
| Fall Time | 31 ns | 35 ns | 35 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 35 ns | 65 ns | 38 ns |
| Factory Pack Quantity | 25 | 25 | 25 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 100 ns | 110 ns | 175 ns |
| Typical Turn On Delay Time | 30 ns | 40 ns | 35 ns |
| Unit Weight | 0.352740 oz | 0.352740 oz | 0.352740 oz |