IXDH20N120

IXDH20N120 vs IXDH20N120D1

 
PartNumberIXDH20N120IXDH20N120D1
DescriptionIGBT Transistors 20 Amps 1200VIGBT Transistors 20 Amps 1200V
ManufacturerIXYSIXYS
Product CategoryIGBT TransistorsIGBT Transistors
RoHSYY
TechnologySiSi
Package / CaseTO-247-3TO-247-3
Mounting StyleThrough HoleThrough Hole
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max1200 V1.2 kV
Collector Emitter Saturation Voltage2.4 V2.4 V
Maximum Gate Emitter Voltage20 V20 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
SeriesIXDH20N120IXDH20N120
PackagingTubeTube
Continuous Collector Current Ic Max38 A50 A
Height21.46 mm21.46 mm
Length16.26 mm16.26 mm
Width5.3 mm5.3 mm
BrandIXYSIXYS
Continuous Collector Current38 A38 A
Product TypeIGBT TransistorsIGBT Transistors
Factory Pack Quantity3030
SubcategoryIGBTsIGBTs
Unit Weight0.229281 oz0.229281 oz
Continuous Collector Current at 25 C-38 A
Pd Power Dissipation-200 W
Operating Temperature Range-- 55 C to + 150 C
Gate Emitter Leakage Current-500 nA
Produttore Parte # Descrizione RFQ
Littelfuse
Littelfuse
IXDH20N120 IGBT Transistors 20 Amps 1200V
IXDH20N120D1 IGBT Transistors 20 Amps 1200V
IXDH20N120D1 IGBT Transistors 20 Amps 1200V
IXDH20N120 IGBT Transistors 20 Amps 1200V
IXDH20N120D Nuovo e originale
IXDH20N120DI Nuovo e originale
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