IXBH1

IXBH12N300 vs IXBH10N170 vs IXBH10N300HV

 
PartNumberIXBH12N300IXBH10N170IXBH10N300HV
DescriptionIGBT Transistors DISC IGBT BIMSFT-VERYHIVOLTIGBT Transistors 10 Amps 1700V 2.3 RdsIGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYY-
TechnologySiSiSi
Package / CaseTO-247-3TO-247-3TO-247HV-3
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max3 kV1700 V3 kV
Collector Emitter Saturation Voltage2.8 V2.3 V2.2 V
Maximum Gate Emitter Voltage20 V20 V20 V
Continuous Collector Current at 25 C30 A-34 A
Pd Power Dissipation160 W-180 W
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesVery High VoltageIXBH10N170-
PackagingTubeTube-
Continuous Collector Current Ic Max30 A20 A88 A
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
Width5.3 mm5.3 mm-
BrandIXYSIXYSIXYS
Gate Emitter Leakage Current+/- 100 nA-100 nA
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity303030
SubcategoryIGBTsIGBTsIGBTs
TradenameBIMOSFETBIMOSFET-
Unit Weight0.056438 oz0.229281 oz-
Continuous Collector Current-16 A-
Produttore Parte # Descrizione RFQ
Littelfuse
Littelfuse
IXBH14N250 Gate Drivers 2500V
IXBH14N250A Gate Drivers 14 Amps 2500V
IXBH12N300 IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
IXBH16N170A IGBT Transistors 1700V 16A
IXBH16N170 IGBT Transistors 1700V 25A
IXBH10N170 IGBT Transistors 10 Amps 1700V 2.3 Rds
IXBH10N300HV IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
IXBH14N250A Gate Drivers 14 Amps 2500V
IXBH14N250 Gate Drivers 2500V
IXBH10N120 Nuovo e originale
IXBH12N300 IGBT 3000V 30A 160W TO247
IXBH15N140 Nuovo e originale
IXBH15N160 Nuovo e originale
IXBH1836 Nuovo e originale
IXBH10N300HV IGBT 3000V 20A 140W TO247AD
IXBH10N170 IGBT Transistors 10 Amps 1700V 2.3 Rds
IXBH16N170A IGBT Transistors 1700V 16A
IXBH16N170 IGBT Transistors 1700V 25A
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